About RFHIC US Corporation
||RFHIC US Corporation was founded to address the need for cost effective, high performing and efficient power amplifiers for US military customers. RFHIC US Corporation has sales representatives supporting various regions of the US market. RFHIC US Corporation is a world-class RF component maker, utilizing the most sophisticated technologies including hybrid solutions of GaN (Gallium Nitride), and has become the leading cost effective solution provider to the RF industry. RFHIC US Corporation is ITAR registered.
Our contracted manufacturing partner, RFHIC, is ISO9001 and 14001 certified, providing reliable & dependable products. Being a 'One-stop facility' solution provider, our manufacturer is capable of processing MMIC, Die Attach, Wire Bonding, Packaging, Chip on Board, Hybrid, SMT Line, RF Test Line, and Quality Control actions all in its facility. In addition, the Restriction of Hazardous Substances Directive (RoHS), and Lead (Pb)-Free are some of the programs we have implemented.
RFHIC and CREE
||"The combination of Cree's and RFHIC's core strengths can accelerate GaN HEMT market penetration in cellular infrastructure, two-way communication, CATV amplifier, and a variety of other emerging market segments.
It provides a wide range of options in hardware integration levels to best address customer needs." said Jim Milligan, director of RF and microwave products at Cree.
"Cree's GaN-on-SiC HEMT process is the most mature GaN HEMT process in the market. We initially pursued a GaN-on-Silicon HEMT approach but converted our product line and future direction to Cree's GaN-on-SiC HEMT technology based on its superior thermal and electrical characteristics as well as its outstanding robustness and reliability. RFHIC aims to offer cost-effective, GaN HEMT amplifier solutions to the market, and Cree GaN-on-SiC HEMT is the clear winner for our product plans." commented Dr.Samuel Cho, RFHIC's chief technology officer.